Open RQC colloquium. Lecture 32

Abstract

Switching of magnetization direction by electrical current with high speed and low energy has drawn attention due to its applications including magnetic random access memory (MRAM). The core cell of MRAM is a magnetic tunnel junction (MTJ) consisting of ferromagnetic free layer, tunnel barrier, and ferromagnetic pinned layer. While the reading scheme has utilized tunneling magnetoresistance (TMR), the writing scheme has evolved from field-driven to spin-transfer torque (STT) based magnetization reversal. Lately, a new switching principle called ‘spin-orbit torque (SOT)’ has been discovered in various sets of nonmagnetic heavy metal/ferromagnet structures such as W/CoFeB where in-plane current injection induces magnetization reversal in perpendicularly magnetized layer. A large number of research efforts are being pursued worldwide on the understanding the underlying physics as well as on the search for new sets of material systems exhibiting large SOT efficiencies. To be practical for high-density memory applications, there are various engineering issues to be resolved which are related with materials and processes. In this talk, I will discuss the current status and future aspects of MRAM research and development efforts.

Biography

Professor Kim is a faculty member of Korea University, Seoul, Korea since 2000. He is a Fellow of the Korean Academy of Science and Technology (KAST). He received the National Order of Service Merit-Green Stripes from the Korean government in June, 2017. Before he joined Korea University, he worked for Quantum Corporation in USA and Samsung Electro-Mechanics in Korea. He received the B.S. (1985) and M.S. (1987) degrees in Metallurgical Engineering from Seoul National University, and the Ph.D. degree (1993) in Materials Science and Engineering from MIT. From 2008 to 2011, he served as the President of Research and Business Foundation of Korea University in charge of managing university research funds, intellectual property rights and technology transfer. He served a Member of Board of Directors of the Korean Institute of Metals and Materials (KIM). Currently, he is an Editorial Board Member of Scientific Reports and IEEE Transactions on Magnetics, a Council Member of the Asian Union of Magnetic Societies (AUMS), and the Auditor of the Korean Magnetics Society (KMS). He has published over 240 peer-reviewed journal papers, invented over 60 registered patents, and delivered over 100 invited talks. Prof. Kim’s research interests include novel thin films and nanostructured materials development for biomedical and magnetic memory applications.

Please don't forget to take passport for entering to the University. We will meet you at the guard desk.

FREE ENTRANCE.